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SiC Dioden

Serie/Typ	Hersteller	Produktgruppe	Artikelkategorie	Hauptkategorie	Gehäusetyp	Topologie	Nennspannung[Vdc]	Nennstrom [A]	Nennstrom [mA]	Produkt Feature	Produkt Status
GHXS010A060S-D3	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	SOT-227	Duel Diode Pack	600	10	0,01	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Anfragen
GHXS020A060S-D3	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	SOT-227	Duel Diode Pack	600	20	0,02	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Anfragen
GHXS030A060S-D3	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	SOT-227	Duel Diode Pack	600	30	0,03	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 700V	in production	Anfragen
GHXS030A060S-D1E	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	SOT-227	Rectifier Bridge	600	30	0,03	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Anfragen
GHXS050A060S-D3	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	SOT-227	Duel Diode Pack	600	50	0,05	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Anfragen
GHXS050B065S-D3	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	SOT-227	Duel Diode Pack	650	50	0,05	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Anfragen
GHXS100B065S-D3	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	SOT-227	Duel Diode Pack	650	100	0,1	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V	in production	Anfragen
GHXS015A120S-D1	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	SOT-227	Rectifier Bridge	1200	15	0,015	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Anfragen
GHXS015A120S-D3	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	SOT-227	Duel Diode Pack	1200	15	0,015	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Anfragen
GHXS030A120S-D3	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	SOT-227	Duel Diode Pack	1200	30	0,03	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Anfragen
GHXS030A120S-D1E	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	SOT-227	Rectifier Bridge	1200	30	0,03	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Anfragen
GHXS045A120S-D3	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	SOT-227	Duel Diode Pack	1200	45	0,045	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Anfragen
GHXS050B120S-D3	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	SOT-227	Duel Diode Pack	1200	50	0,05	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Anfragen
GHXS060A120S-D3	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	SOT-227	Duel Diode Pack	1200	60	0,06	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation	in production	Anfragen
GHXS100B120S-D3	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	SOT-227	Duel Diode Pack	1200	100	0,1	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Anfragen
GHXS300A120S7D5	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	S7	Half Bridge	1200	300	0,3	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Anfragen
GHXS400A120S7D5	SemiQ	SiC Module	SiC Dioden	Aktive Komponenten	S7	Half Bridge	1200	400	0,4	• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V	in production	Anfragen